The atomic-scale material and device group at School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, USA, has openings for Research Assistants for Ph.D. study to work on a broad range of topics on nano-electronics, micro-electronics and power-electronics. We are looking for self-motivated and hard working students with outstanding academic record and ambition to do world-class research. Our research activities are particularly focused on integration of atomic layer deposition (ALD) technology with novel channel materials such as Ge and III-V (GaAs, InGaAs, InP, InSb, etc.), nanowires, graphene, phosphorene and other 2D materials. Purdue has the state-of-the-art facilities in materials growth, nano-scale device fabrication, testing and characterization. We are the leading group on ALD high-k/III-V and Ge integration and 2D nano-devices. In 2014, we published 3 VLSI and 5 IEDM papers and also pioneered a new 2D material phosphorene for transistor applications with thousand citations. The Birck Nanotechnology Center opened in July of 2005. This $58 million facility comprises 18,700 square meters with 2500 square meters Class 10-100-1000 nanofabrication cleanroom. Applicants should visit our website: http://cobweb.ecn.purdue.edu/~yep/ and send curriculum vitae to: Prof. Peide (Peter) Ye, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, U.S.A. or E-mail: yep@purdue.edu 返回小木虫查看更多